Selective etching is a process that removing required layer and no hurt to any other layer, usually the removed layer should be at the top side, but in some situation, we could also remove the inside layer We could do any pattern quickly, no mask required and chemical polluation to the product,normally the min line width and pitch could be 20~30um, in some material we could achieve less than 10um The layer thcikness could be 10nm~10um And we also succeed in doulbe sides etching of different patterns
ITO layer removed shot by SEM
Transparent circuits ( Transparant ITO glass with customized patterns)
Click here for more ITO and TCO patterning cases
Normally >20um etching line width, but for some case we could achieve 10um and less
Min 1~2um etching width could be achieved (Isolated)
Click here for sub-micron features case
Metal layer selective etching: Ag coating patterning & Chrome coating patterning, glass/quartz substrate
Au-Layer Selective Etching
Selective patterning: Au coating on alumina substrate
Multi-layer selective etching: remove silicon deposition and keep ITO layer remaining, thin film solar cell scribing
PMMA dot patterning
Chemical etching of steel
Micro engraving in glass Click here for more glass cases
Laser induced inner hole etching, please contact with us for more cases of this process
